Vishay PCS IRFD9120PBF
MOSFET, Power,P-Ch,VDSS -100V,RDS(ON) 0.6Ohm,ID -1A,HD-1,PD 1.3W,VGS +/-20V,-55C
Mfr. Part #: IRFD9120PBF / RS Stock #: 70078900
Image may be a representation. See specs for product details.
Price
Qty.
Standard Price
1
$0.87914
Additional Inventory
Bulk pricing available
Product Specifications
Product Attribute
Attribute Value
Search
Channel Type
P
Configuration
Single
Drain Current
-0.7 A
Drain to Source On Resistance
0.6 Ohms
Drain to Source Voltage
-100 V
Forward Transconductance
0.71 S
Forward Voltage, Diode
-6.3 V
Gate to Source Voltage
20 V
Input Capacitance
390 pF @ -25 V pF
Maximum Operating Temperature
175 °C
Minimum Operating Temperature
-55 °C
Mounting Type
Through Hole
Number of Elements per Chip
1
Number of Pins
4
Package Type
HVMDIP
Polarization
P-Channel
Power Dissipation
1.3 W
Product Header
Hexfet® Power MOSFET
Temperature Operating Range
-55 to +175 °C
Total Gate Charge
18 nC
Turn Off Delay Time
21 ns
Turn On Delay Time
9.6 ns
Typical Gate Charge @ Vgs
Maximum of 18 nC @ -10 V
Voltage, Breakdown, Drain to Source
-100 V
Overview
Vishay IRF Series Power MOSFETs
Third-generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.
Features:
Fast Switching
P-Channel
Dynamic dV/dt Rating
Compliant to RoHS Directive 2002/95/EC
Ease of Paralleling
Third-generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.
Features:
